Ni precursor for chemical vapor deposition of NiSi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1833-1836

  Ishikawa, Masato ^a   Kada, Takeshi ^a   Machida, Hideaki ^a   Ohshita, Yoshio ^b   Ogura, Atsushi ^c  

^a TRI Chemical Laboratory Inc   (Japan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

(MeCp)2Ni, Ni, NiSi, NiSi2; CVD; Decomposition temperature; Vapor pressure

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; NICKEL; SILICON; THERMAL EFFECTS; THERMOGRAVIMETRIC ANALYSIS; VAPOR PRESSURE; X RAY DIFFRACTION ANALYSIS;

(MECP)2NI; DECOMPOSITION TEMPERATURE; NISI; NISI2;

NICKEL COMPOUNDS;

EID: 3142534881     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1833     Document Type: Conference Paper

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