Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1569-1572

  Onojima, N ^a   Kaido, J ^a   Suda, J ^a,b   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Aln; Interface states; MIS; Molecular beam epitaxy (mbe); SIC

Indexed keywords

BAND STRUCTURE; CAPACITORS; HETEROJUNCTIONS; INTERFACES (MATERIALS); IRRADIATION; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; THERMAL EXPANSION;

GROWTH CONDITIONS; HETERO-INTERFACE; INTERFACE STATES; INTERFACE TRAPS;

SINGLE CRYSTALS;

EID: 8744311719     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1569     Document Type: Conference Paper

References (4)

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2. N. Onojima, J. Suda and H. Matsunami: Appl. Phys. Lett. Vol. 80 (2002), p. 76.
3. N. Onojima, J. Suda and H. Matsunami: Mater. Sci. Forum Vols. 389-393 (2001), p. 1457.
4. N. Onojima, J. Suda and H. Matsunami: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L445.