Structural properties of epitaxial γ- Al2O3 (111) thin films on 4H-SiC (0001)

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Tanner, Carey M ^a   Sawkar Mathur, Monica ^a   Lu, Jun ^b   Blom, Hans Olof ^b   Toney, Michael F ^c   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UPPSALA UNIVERSITY   (Sweden)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STABILITY; EPITAXIAL RELATIONSHIP; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 33847007287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435978     Document Type: Article

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