Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al 2 O 3 as gate dielectric

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Paskaleva, A ^a   Ciechonski, R R ^b   Syvajarvi M ^b   Atanassova, E ^a   Yakimova, R ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTRON INJECTION; ENERGY DISTRIBUTIONS; GATE DIELECTRICS;

ALUMINA; ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDATION; SILICON CARBIDE; SPUTTER DEPOSITION; SUBLIMATION;

SEMICONDUCTOR MATERIALS;

EID: 21644461328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1938267     Document Type: Article

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