Epitaxial growth and structure of thin single crystal γ-Al 2O3 films on Si (111) using e-Beam evaporation of sapphire in ultra-high vacuum

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 275-280

  Hong, M ^b   Kortan, A R ^a   Kwo, J ^a   Mannaerts, J P ^a   Wu, S Y ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON BEAMS; EVAPORATION; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SILICA; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; ULTRAHIGH VACUUM; X RAY DIFFRACTION;

HETERO-EPITAXIAL GROWTH; LATTICE MISMATCH; SURFACE ORIENTATION; THREE-DIMENSIONAL INTEGRATED CIRCUITS;

SINGLE CRYSTALS;

EID: 12844270658     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d9.5     Document Type: Conference Paper

References (4)

1. Y. C. Jung, H. Miura, K. Ohtani, and M. Ishida, J. Crystal Grwoth 196, 88-96, 1999, and references therein.
2. A. Wakahara, H. Oishi, H. Okada, A. Yoshida, Y. Koji, and M. Ishida, J. Crystal Grwoth 236, 21-25, 2002, and references therein.
3. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14(3), May/Jun, 2297, 1996.
4. M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, to be published, 2004.