On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1238-1251

  Nawaz, Muhammad ^a   Molzer, Wolfgang ^a   Decker, Stefan ^a   Giles, Luis Felipe ^a   Schulz, Thomas ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

FinFETs; MuGFETs; Multigate MOSFETs; Process and device simulation; TCAD

Indexed keywords

ACTIVATION ANALYSIS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES);

DEVICE SIMULATION; MUGFET; MULTIGATE MOSFETS;

FIELD EFFECT TRANSISTORS;

EID: 36348997141     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.018     Document Type: Article

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