A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Kang, C Y ^a   Choi, R ^a   Song, S C ^a   Choi, K ^a   Ju, B S ^a   Hussain, M M ^a   Lee, B H ^b   Bersuker, G ^a   Young, C ^a   Heh, D ^a   Kirsch, P ^a   Barnet, J ^a   Yang, J W ^a   Xiong, W ^c   Tseng, H H ^c   Jammy, R ^b  

^a SEMATECH   (United States)

^b IBM   (United States)

^c Ti ^*

Author keywords

[No Author keywords available]

Indexed keywords

HIGH FIELDS; HIGH-K DIELECTRICS; INDUCED STRAIN; METAL ELECTRODES; MOBILITY DEGRADATION; N-MOSFETS; P-MOSFETS; SI(110); SOI DEVICES; SOI FINFETS; STRAIN EFFECTS; STRAIN ENGINEERING; WORK FUNCTION TUNING; WORK FUNCTIONS;

ELECTROLYSIS; ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; METALLIZING; METALS; MOSFET DEVICES; OPTIMIZATION; SILICON; SULFATE MINERALS; TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 46049084627     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346924     Document Type: Conference Paper

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