Quasi-planar FinFETs with selectively grown germanium raised source/drain

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 111-112

  Lindert, N ^a   Choi, Y K ^a   Chang, L ^a   Anderson, E ^a   Lee, W C ^a   King, T J ^a   Bokor, J ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY;

SILICON FILMS;

MOSFET DEVICES;

EID: 0035168479     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)