Full field EUV lithography turning into a reality at IMEC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6607, Issue PART 1, 2007, Pages

  Jonckheere, Rik ^a   Lorusso, Gian Francesco ^a   Goethals, Anne Marie ^a   Hermans, Jan ^a   Baudemprez, Bart ^a   Myers, Alan ^b   Kim, Insung ^c   Niroomand, Ardavan ^d   Iwamoto, Fumio ^e   Stepanenko, Nickolay ^f   Ronse, Kurt ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

^c SAMSUNG Electronics   (South Korea)

^d MICRON TECHNOLOGY INC   (United States)

^e PANASONIC CORPORATION   (Japan)

^f Qimonda ^*  (Germany)

Author keywords

Correction; EUV lithography; EUV resist; EUV reticles; Flare; Shadowing

Indexed keywords

EUV RESIST; EUV RETICLES; FLARE; SHADOWING;

COMPUTER SIMULATION; DEFECTS; WAVE INTERFERENCE;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 36248985129     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.729259     Document Type: Conference Paper

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