Image formation in extreme ultraviolet lithography and numerical aperture effects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2992-2997

  Bollepalli, Srinivas B ^a   Khan, M ^a   Cerrina, Franco ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033267618     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590941     Document Type: Article

References (8)

1. Next Generation Lithography Workshop Proceedings, Austin, TX, 1998; see http://www.sematech.org:80/public/news/releases/nglrecmd.htm.
2. B. S. Bollepalli, M. Khan, and F. Cerrina, J. Vac. Sci. Technol. B 16, 3444 (1998).
3. T. E. Jewell, J. M. Rodgers, and K. P. Thompson, J. Vac. Sci. Technol. B 8, 1519 (1990).
4. H. Weyl, Ann. Phys. (Leipzig) 60, 481 (1919).
5. J. W. Goodman, Introduction to Fourier Optics (McGraw-Hill, New York, 1968).
6. M. Born and E. Wolf, Principles of Optics (Pergamon, New York, 1980).
7. C. Gwyn, "Extreme Ultraviolet Lithography," A White Paper Report, EUV-LLC (1998). (Copies of this can be obtained from EUV LLC, P. O. Box 969, MS-9911, Livermore, CA 94551-0069.)
8. D. W. Sweeney, R. Hudyma, H. N. Chapman, and D. Shafer, Proc. SPIE 3331, 2 (1998).