Annealing study of H2O and O3 grown Al 2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC

Physica Scripta T

Volumn T126, Issue , 2006, Pages 6-9

  Avice, Marc ^a   Grossner, Ulrike ^a   Nilsen, Ola ^a   Christensen, Jens S ^a   Fjellvåg, Helmer ^a   Svensson, Bengt G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS);

ARGON ATMOSPHERE; INTERFACE PROPERTIES;

HYDROGEN INORGANIC COMPOUNDS;

EID: 34548691391     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/002     Document Type: Conference Paper

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