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Volumn 91, Issue 5, 2007, Pages
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Rearrangement of the oxide-semiconductor interface in annealed Al 2O3/4H-SiC structures
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
ELECTRON ENERGY LEVELS;
INTERFACES (MATERIALS);
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
AVERAGE COMPOSITION;
INTERFACE AREA;
SUBOXIDES;
ALUMINA;
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EID: 34547666790
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2757608 Document Type: Article |
Times cited : (13)
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References (14)
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