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Volumn 91, Issue 5, 2007, Pages

Rearrangement of the oxide-semiconductor interface in annealed Al 2O3/4H-SiC structures

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34547666790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2757608     Document Type: Article
Times cited : (13)

References (14)
  • 7
    • 34547678729 scopus 로고    scopus 로고
    • NIST X-ray Photoelectron Spectroscopy Database, http://srdata.nist.gov/ xps
  • 9
    • 34547653255 scopus 로고    scopus 로고
    • C. J. Powell and A. Jablonski, NIST Electron Inelastic Mean Free Path Database, Version 1.1, National Institute of Standards and Technology, Gaithersburg, 2000.
    • (2000)
    • Powell, C.J.1    Jablonski, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.