High temperature annealing study of Al2O3 deposited by ALCVD on n-type 4H-SiC

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1067-1070

  Avice, Marc ^a   Grossner, Ulrike ^a   Nilsen, Ola ^a   Christensen, Jens S ^a   Fjellvåg, Helmer ^a   Svensson, Bengt G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

Al2O3; ALCVD; Annealing; CV; DLTS; MOS; SIMS

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); HIGH TEMPERATURE ANNEALING; VOLTAGE SHIFT;

ALUMINUM COMPOUNDS;

EID: 33751573136     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1067     Document Type: Conference Paper

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