Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation

Materials Research Society Symposium Proceedings

Volumn 812, Issue , 2004, Pages 361-372

  Zschech, Ehrenfried ^a   Meyer, Moritz A ^a   Langer, Eckhard ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CHEMICAL MECHANICAL POLISHING; COPPER; DEGRADATION; ELECTRIC POTENTIAL; ELECTROMIGRATION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MASS TRANSFER; MICROSTRUCTURE; RELIABILITY; SCANNING ELECTRON MICROSCOPY;

BONDING STRENGTH; VOID FORMATION; VOID GROWTH; X-RAY MICROSCOPY (XRM);

INTERCONNECTION NETWORKS;

EID: 12844276517     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-812-f7.5     Document Type: Conference Paper

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