Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films

Journal of Electronic Materials

Volumn 30, Issue 12, 2001, Pages 1506-1512

  Kang, S H ^a   Obeng, Y S ^a   Decker, M A ^a   Oh, M ^a   Merchant, S M ^a   Karthikeyan, S K ^a   Seet, C S ^a,b   Oates, A S ^a  

^a AGERE SYSTEMS   (United States)

^b Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

Annealing; Cu interconnects; Electromigration; Electroplating; Nanoindentation; Surface roughness

Indexed keywords

ANNEALING; CHEMICAL MECHANICAL POLISHING; COPPER; ELECTROMIGRATION; ELECTROPLATING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HARDNESS; MICROSTRUCTURE; SURFACE ROUGHNESS;

ELECTROMIGRATION RELIABILITY;

METALLIC FILMS;

EID: 0035737894     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0166-0     Document Type: Article

References (7)