A physically based model of electromigration and stress-induced void formation in microelectronic interconnects

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 1932-1944

  Gleixner, R J ^a,b   Nix, W D ^b  

^a INTEL CORPORATION   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; ELECTROMIGRATION; FINITE ELEMENT METHOD; GRAIN GROWTH; INTERDIFFUSION (SOLIDS); NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; STRESS ANALYSIS;

BOLTZMANN CONSTANT; COUPLED STRESS-DIFFUSION EQUATIONS; STRESS-INDUCED VOID FORMATIONS;

ELECTRIC CONTACTS;

EID: 0032606961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370990     Document Type: Article

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