SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 279-283

Effect of interface modification on EM-induced degradation mechanisms in copper interconnects

(7) Zschech, E a Meyer, M A a Mhaisalkar, S G b Vairagar, A V a,b Krishnamoorthy, A c Engelmann, H J a Sukharev, V d

a IBM MICROELECTRONICS (United States)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c INSTITUTE OF MICROELECTRONICS (Singapore)

d AGERE SYSTEMS (United States)

Author keywords

Atomic transport; Copper interconnect; Electromigration; Interface

Indexed keywords

COMPUTER SIMULATION; ELECTROMIGRATION; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY;

ATOMIC TRANSPORT; COPPER INTERCONNECT;

OPTICAL INTERCONNECTS;

EID: 33644896201 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.09.175 Document Type: Conference Paper

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.