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Volumn 143-147, Issue , 1997, Pages 1397-1406
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Grain boundary diffusion and electromigration in Cu-Sn alloy thin films and their VLSI interconnects
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Author keywords
Activation energies for grain boundary diffusion and electromigration; Cu Sn system; Electromigration; Grain boundary diffusion; Solute effect; Thin films
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Indexed keywords
ACTIVATION ENERGY;
BINARY ALLOYS;
COPPER ALLOYS;
DIFFUSION;
ELECTROMIGRATION;
GRAIN BOUNDARIES;
INTEGRATED CIRCUIT INTERCONNECTS;
RADIOACTIVE TRACERS;
RADIOACTIVITY;
THIN FILMS;
VLSI CIRCUITS;
COMPARATIVE STUDIES;
GRAIN-BOUNDARY DIFFUSION;
GRAIN-BOUNDARY SELF-DIFFUSION;
LOW TEMPERATURES;
SOLUTE EFFECTS;
SOLUTE SEGREGATION;
TRACER DIFFUSION;
VLSI INTERCONNECTS;
TIN ALLOYS;
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EID: 62849128166
PISSN: 10120386
EISSN: 16629507
Source Type: Journal
DOI: 10.4028/www.scientific.net/DDF.143-147.1397 Document Type: Article |
Times cited : (25)
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References (16)
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