Structural and electrical properties of a La2O3 thin film as a gate dielectric

Journal of the Korean Physical Society

Volumn 41, Issue 6, 2002, Pages 998-1002

  Jun, Jin Hyung ^a   Wang, Chae Hyun ^a   Won, Dong Jin ^a   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

Electrical and structural properties; Lanthanum oxide; Metal organic chemical vapor deposition

Indexed keywords

EID: 0036946641     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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