Scientific and technological issues related to rare earth oxides: An introduction

Topics in Applied Physics

Volumn 106, Issue , 2006, Pages 1-14

  Scarel, Giovanna ^a   Svane, Axel ^b   Fanciulli, Marco ^a  

^a LABORATORIO MDM   (Italy)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33750797552     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/11499893_1     Document Type: Article

References (56)

1. L. Petit, A. Svane, Z. Szotek, W. M. Temmerman: First principles study of rare-earth oxides, Phys. Rev. B 1, 2, 1, 5, 7, 8
2. W. M. Temmerman, Z. Szotek, A. Svane, P. Strange, H. Winter, A. Delin, B. Johansson, O. Eriksson, L. Fast, J. M. Wills: Electronic configuration of ytterbium compounds, Phys. Rev. Lett. 83, 3900 (1999) 1
3. M. Horne, P. Strange, W. M.Temmerman, Z. Szotek, A. Svane, H. Winter: The electronic structure of europium chalcogenides and pnictides, J. Phys. Condens. Matter 16, 5061 (2004) 1, 3
4. A. Svane, V. Kanchana, G. Vaitheeswaran, G. Santi, W. M. Temmerman, Z. Szotek, P. Strange, L. Petit: Electronic structure of samarium monopnictides arid rnonochalcogenides, Phys. Rev. B 71, 45119 (2005) 1
5. P. Villars, L. D. Calvert: Pearson's handbook of crystallographic data for intermetallic phases, 2nd ed. (ASM International, Ohio 1991) 2
6. J. M. Leger, N. Yacoubi, J. Loriers: Synthesis of rare earth monoxides, J. Sol. State Chem. 36, 1981 (1981) 2
7. Y. Sakabe, Y. Harnaji, H. Sano, N. Wada: Effects of rare-earth oxides on the reliability of X7R. dielectrics, Jpn. J. Appl. Phys. 41, 5668 (2002) 2, 8
8. G. D. Wilk, R. M. Wallace, J. M. Anthony: High-k gate dielectrics: current status and materials properties, J. Appl. Phys. 89, 5243 (2001) 2
9. D. G. Schlom, J. H. Haeni: A thermodynamic approach to selecting alternative gate deielctrics, MRS Bull. 27, 198 (2002) 2
10. 2 annealing, Appl. Phys. Lett. 79, 671 (2001) 3
11. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, A. M. Sergent: Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation, Science 283, 1897 (1999) 3
12. V. Narayanan, S. Guha, M. Copel, N. A. Bojarczuk, P. L. Flaitz, M. Gribelyuk: Interfacial oxide formation and oxygen diffusion in rare earth oxide - silicon epitaxial heterostructures, Appl. Phys. Lett. 81, 4183 (2002) 3
13. S. Stemmer: Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide- semiconductors, J. Vac. Sci. Technol. B 22, 791 (2004) 3
14. L. Marsella, V. Fiorentini: Structure and stability of rare-earth and transition-metal oxides, Phys. Rev. B 69, 172103 (2004) 3
15. 3, Appl. Phys. Lett. 85, 630 (2004) 3, 7, 8
16. 23 thin films deposited on Si(100) by atomic layer deposition, Nuc. Instr. Method. B 246, 90 (2006) 3
17. 3 films, Z. Naturforsch. 59b, 1035 (2004) 3
18. M. F. Fischetti, D. A. Neumayer, E. A. Cartier: Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: the role of remote phonon scattering, J. Appl. Phys. 90, 4587 (2001) 3, 9
19. N. V. Skorodumova, S. I. Simak, B. I. Lundqvist, I. A. Abrikosov, B. Johansson: Quantum origin of the oxygen storage capability of ceria, Phys. Rev. Lett. 89, 166601 (2002) 4
20. J. Lettieri, V. Vaithyanathan, S. K. Eah, J. Stephens, V. Sih, D. D. Awschalom, J. Levy, D. G. Schlom: Epitaxial growth and magnetic properties of EuO on (001) Si by rnolecular-beam epitaxy, Appl. Phys. Lett. 83, 975 (2003) 4
21. 3 (X = O, S, Se) in the lanthanide series, J. All. Comp. 242, 41 (1996) 4, 5, 6, 8, 9
22. H. B. Lal, K. Gaur: Electrical conduction in non-metallic rare-earth solids, J. Mater. Sci. 23, 919 (1988) 4, 5, 6
23. I. A. Bersuker: Electronic Structure and Properties of Transition Metal Compounds (Wiley 1996) Chap. 7 4
24. G. Lucovsky, Y. Zhang, G. B. Rayner, G. Appel, H. Ade, J. L. Whitten: Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys, J. Vac. Sci. Technol. B 20, 1739 (2002) 4
25. 2 and alternative gate dielectrics, J. Vac. Sci. Technol. B 22, 2097 (2002) 5
26. 3/silicon structures, Appl. Phys. Lett. 85, 5316 (2004) 5, 6
27. 2 in fluorite phase, Micro-electron. Rel. 41, 1093 (2001) 5
28. L. Hedin: On the correlation effects in electron spectroscopies and the GW approximation, J. Phys. Condens. Matter 11, R489 (1999) 5
29. J. Robertson: Electronic structure and band-offsets of high-dielectric-constant gate oxides, MRS Bull. 27, 217 (2002) 6
30. 2, Appl. Phys. Lett. 81, 1053 (2002) 6
31. 3/Si(001) heterojunctions, Appl. Phys. Lett. 80, 297 (2002) 6
32. 2 high-k gate dielectrics directly grown on Si(111), Appl. Phys. Lett. 81, 4386 (2002) 6, 8
33. 3-Si, Tech. Phys. 44, 404 (1999) 6
34. T. Hattori, T. Yosbida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai: Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer, Microel. Eng. 72, 283 (2004) 7
35. 3, Phys. Rev. Lett. 94, 27602 (2005) 7, 8
36. G. V. Samsonov, I. Y. Gil'man: Electronic structure and physical properties of the oxides of the lanthanides, Soviet Powder Metallurgy and Metal Ceramics 13, 925 (1974) 7
37. P. Delugas, V. Fiorentini: Dielectric properties of the two phases of crystalline lutetium oxide, Microelectron. Rel. 45, 831 (2005) 7
38. 3 thin films for high-k gate insulator application, J. Electrochem. Soc. 150, F134 (2003) 7, 8
39. H. Yamada, T. Shimizu, A. Kurokawa, K. Ishii, E. Suzuki: MOCVD of high-dielectric-constant lanthanum oxide thin films, J. Electrochem. Soc. 150, G429 (2003) 7, 8
40. A. Fissel, H. J. Osten, E. Bugiel: Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide, J. Vac. Sci. Technol. B 21, 1765 (2003) 7, 8
41. K. Kukli, M. Ritala, T. Pilvi, T. Sajavaara, M. Leskelä, A. C. Jones, H. C. Aspinall, D. G. Gilmer, P. J. Tobin: Evaluation of a praseodymium precursor for atomic layer deposition of oxide dielectric films, Chem. Mater. 16, 5162 (2004) 7, 8
42. 2 on Si(111), Appl. Phys. Lett. 65, 3081 (1994) 8
43. T. R. Griffiths, M. J. Davies, H. V. S. A. Hubbard: Spectroscopic studies on single crystals having the fluorite lattics, J. Chem. Soc. Faraday Trans. II 4, 765 (1976) 8
44. 3 thick gate dielectric for silicon, Phys. Stat. Sol. (a) 201, 745 (2004) 8
45. J. Päiväsaari, M. Putkonen, L. Niinistö: A comparative study on lanthanide oxide thin films grown by atomic layer deposition, Thin Solid Films 472, 275 (2005) 8
46. A. A. Dakhel: Dielectric and optical properties of samarium oxide thin films, J. All. Comp. 365, 233 (2004) 8
47. P. Watcher: Europium Chalcogenides: EuO, EuS, EuSe, and EuTe, in K. A. Gschneider, Jr., L. Eyring (Eds.): Handbook on the Physics and Chemistry of Rare Earths 8
48. J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Grossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, T. Gustafsson: International conference on molecular beam epitaxy (cat. no. 02ex607), in (2002) p. 47 8
49. 3 films deposited on Si(100) by electron-beam evaporation, J. Electrochem. Soc. 148, G29 (2001) 8
50. M. P. Singh, C. S. Thakur, K. Shalini, S. Banerjee, N. Bhat, S. A. Shivashankar: J. Appl. Phys. 96, 5631 (2004) 8
51. 3 insulator thin films, J. Appl. Phys. 95, 613 (2004) 8
52. T. Zdanovicz, L. Zdanowicz: Preparation and some electrical properties of thulium oxide films, Thin Solid Films 58, 390 (1979) 8
53. 3 thin films fabricated by e-beam deposition method, J. Electrochem. Soc. 151, G279 (2004) 8, 9
54. R. D. Shannon: Dielectric polarizabilities of ions in oxides and fluorides, J. Appl. Phys. 73, 348 (1993) 8
55. 3), J. Appl. Phys. 93, 6393 (2003) 9
56. 3, Phys. Rev. B 69, 134113 (2004) 9