LaOx thin film deposited by direct liquid injection MOCVD

Electrochemical and Solid-State Letters

Volumn 6, Issue 5, 2003, Pages

  Jun, Jino ^a   Jun, Jin Hyung ^a   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC POTENTIAL; LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SOLUTIONS; SUBSTRATES; THERMAL EFFECTS; VAPORIZATION;

DIRECT LIQUID INJECTION METALLORGANIC CHEMICAL VAPOR DEPOSITION; LANTHANUM OXIDE THIN FILMS; LEAKAGE CURRENT DENSITY; TETRAHYDROFURAN;

THIN FILMS;

EID: 0038711877     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1561284     Document Type: Article

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