Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2889-2891

  Singh, M P ^a   Thakur, C S ^a   Shalini, K ^a   Bhat, N ^a   Shivashankar, S A ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ERBIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

THERMAL EVAPORATION;

FILM GROWTH;

EID: 0142229536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616653     Document Type: Article

References (7)

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