Semi-insulating, Fe-doped buffer layers grown by molecular beam epitaxy

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Yugova, T G ^a   Petrova, E A ^a   Dabiran, A M ^b   Wowchak, A M ^b   Osinsky, A V ^b   Chow, P P ^b   Pearton, S J ^c,e   Shcherbatchev, K D ^d   Bublik, V T ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b SVT ASSOCIATES   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^d NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^e ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS GROWTH; ELECTRON GAS MOBILITY; MICROCATHODOLUMINESCENCE (MCL) SPECTRA; TRANSISTOR STRUCTURES GROWTH;

CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC INSULATING MATERIALS; FERMI LEVEL; MOLECULAR BEAM EPITAXY;

BUFFER LAYERS;

EID: 34547548304     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2749094     Document Type: Article

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