Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2639-2642

  Muller S ^a   Kohler K ^a   Kiefer, R ^a   Quay, R ^a   Baeumler, M ^a   Kirste, L ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON MOBILITY; GALLIUM COMPOUNDS; HETEROJUNCTIONS; OPTIMIZATION; SILICON CARBIDE; VAPOR PHASE EPITAXY;

ELECTRON GAS TRANSPORT PROPERTIES; MULTIFINGER TRANSISTOR; MULTIWAFER REACTOR; ROOM TEMPERATURE MOBILITY;

ELECTRONIC STRUCTURE;

EID: 27344455305     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461288     Document Type: Conference Paper

References (8)

1. Y.-F. Wu, B. P. Keller, S. Keller, P.Kapolnek, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Solid State Electron. 41, 1569-1574 (1997).
2. M. S. Shur, Solid State Electron. 42, 2131-2138 (1998).
3. H. Morkoc, A. Di Carlo, and R. Cingolani, Solid State Electron. 46, 157-202 (2002).
4. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222-3233 (1999).
5. K. Köhler, S. Müller, N. Rollbühler, R. Kiefer, R. Quay, G. Weimann M. Mikulla, and G. Weimann, Compound Semiconductors 2002, Inst. Phys. Conf. Ser. 174, 235 (2003).
6. M. Baeumler, S. Müller, K. Köhler, and J. Wagner, to be published in: phys. stat. sol. (a).
7. L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Letters, Vol. 22, No. 10, 457 (2001).
8. R. Kiefer, R. Quay, S. Müller, K. Köhler, F. van Raay, B. Raynor, W. Pletschen, H. Massler, S. Ramberger, M. Mikulla, and G. Weimann, Abstract Book: IEEE Lester Eastman Conference on High Performance Devices, Newark 78-79 (2002).