Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2231-2236

  Rudzinski M ^a   Desmaris, V ^b   Van Hal, P A ^c   Weyher, J L ^a,d   Hageman, P R ^a   Dynefors, K ^b   Rodle T C ^e   Jos, H F F ^b,e   Zirath, H ^b   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

IRON DOPING; SELECTIVE ETCHING; SURFACE QUALITY; THREADING DISLOCATION (TD) DENSITY; 68.37.PS; 68.55.JK; 68.55.LN; 73.61.EY; 81.05.EA; 81.15.GH;

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; DEFECT DENSITY; ELECTRIC PROPERTIES; ORGANOMETALLICS; SEMICONDUCTING SAMARIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 33746327461     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565379     Document Type: Conference Paper

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