Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 313-319

  Iliopoulos, E ^a,b   Zervos, M ^a,b   Adikimenakis, A ^a,b   Tsagaraki, K ^a,b   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

AlGaN GaN heterostructures; High electron mobility transistors; III Nitrides; Molecular beam epitaxy; Silicon doping

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

COMPENSATION RATIO; CONDUCTION BAND; HETEROITERFACES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS;

EID: 33845221226     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.024     Document Type: Article

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