Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5241-5247

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Fang, Z Q ^b   Look, D C ^b   Park, S S ^c   Han, J H ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DAMAGED MATERIALS; DARK SPOTS; DEEP HOLE TRAP; DEEP LEVEL; DENSITY OF DISLOCATION; DISLOCATION DENSITIES; ELECTRON AND HOLE TRAPS; ELECTRON-BEAM-INDUCED CURRENT; HIGH VOLTAGE; HYDRIDE VAPOR PHASE EPITAXY; LOW TEMPERATURES; LOW-DISLOCATION DENSITY; OPTICAL INJECTION; PHOTOCAPACITANCE; REVERSE CURRENTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; GALLIUM NITRIDE; POWER QUALITY;

HOLE TRAPS;

EID: 18744365579     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511823     Document Type: Article

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