On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1429-1434

  Balmer, R S ^a   Soley, D E J ^a   Simons, A J ^a   Mace, J D ^a   Koker, L ^a   Jackson, P O ^a   Wallis, D J ^a   Uren, M J ^a   Martin, T ^a  

^a QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; GAN; RMS ROUGHNESS; SURFACE SEGREGATION MECHANISM; 64.75.+G; 66.30.JT; 68.55.LN; 81.15.GH; 82.80.MS; 82.80.PV;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY; ELECTRON SPECTROSCOPY; SURFACE SEGREGATION; TWO DIMENSIONAL;

IRON; GALLIUM NITRIDE;

EID: 33746334461     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565282     Document Type: Conference Paper

References (23)

1. G. A. Antypas, J. Cryst. Growth 33, 174 (1976).
2. D. B. Holt and G. Salviati, J. Cryst. Growth 100, 497-507 (1990).
3. S. Sugou, Y. Kato, H. Nishimoto, and K. Kasahara, Electron. Lett. 22, 1214-1215 (1986).
4. K. Tanaka, K. Nakai, and S. Yamakoshi, J. Electrochem. Soc. 135, C452-C453 (1988).
5. S. Lourdudoss, B. Hammarlund, and O. Kjebon, J. Electron. Mater. 19, 981-987 (1990).
6. D. W. Covington, J. Comas, and P. W. Yu, Appl. Phys. Lett. 37, 1094-1096 (1980).
7. J. A. Long, V. G. Riggs, and W. D. Johnston, J. Cryst. Growth 69, 10-14 (1984).
8. S. N. G. Chu, S. Nakahara, J. A. Long, V. G. Riggs, and W. D. Johnston, J. Electrochem. Soc. 132, 2795-2798 (1985).
9. A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg. and M. Fatemi, J. Cryst. Growth 260, 54-62 (2004).
10. J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell, Appl. Phys. Lett. 75, 953-955 (1999).
11. Z. Bougrioua, M. Azize, P. Lorenzini, M. Laugt, and H. Haas, phys. stat. sol. (a) 202, 536-544 (2005).
12. R. P. Vaudo, X. P. Xu, A. Salant, J. Malcarne, and G. R. Brandes, phys. stat. sol. (a) 200, 18-21 (2003).
13. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 81, 439-441 (2002).
14. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and S. J. Pearton, J. Vac. Sci. Technol. B 22, 120-125 (2004).
15. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Electron Device Lett. 25, 117 (2004).
16. S. Heikman, S. Keller, T. Mates, S. P. DenBaars, and U. K. Mishra, J. Cryst. Growth 248, 513-517 (2003).
17. A. Y. Cho, J. Appl. Phys. 46, 1733 (1975).
18. C. E. C. Wood and B. A. Joyce, J. Appl. Phys. 49, 4854 (1978).
19. G. B. Stringfellow, Organometallic Vapor-phase Epitaxy, Theory and Practice, 2nd ed. (Academic Press, San Diego, 1999), p. 75.
20. A. N. Nesmeyanov, Vapour pressure of the Elements, edited by J. I. Carasso (Cleaver-Hume Press Ltd., London, 1963), p. 380.
21. G. J. M. Dormans, J. Cryst. Growth 108, 806-816 (1991).
22. J. J. Harris, D. E. Ashenford, C. T. Foxon, P. J. Dobson, and B. A. Joyce, Appl. Phys. Mater. Sci. Process. 33, 87-92 (1984).
23. S. Kuwabara, T. Kondo, T. Chikyow, P. Ahmet, and H. Munekata, Jpn. J. Appl. Phys., Part 2-Lett. 40, L724-L727 (2001).