AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2373-2376

  Aggerstam, T ^a   Sjodin M ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTORS; DEVICE ISOLATION; DRAIN CURRENT DENSITY; GAN BUFFER; 61.72.SS; 73.50.DN; 73.61.EY; 81.15.KK; 85.30.TV;

CURRENT DENSITY; DOPING (ADDITIVES); ELECTRON GAS; GALLIUM NITRIDE; IRON; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON ON SAPPHIRE TECHNOLOGY; HIGH ELECTRON MOBILITY TRANSISTORS; SAPPHIRE; SURFACE SEGREGATION; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS; GALLIUM NITRIDE;

EID: 33746371379     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565152     Document Type: Conference Paper

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