Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 686-690

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Vdovin, V I ^a   Markov, A V ^a   Shlensky, A A ^a   Prebble, Ed ^b   Hanser, Drew ^b   Zavada, J M ^c   Pearton, S J ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b KYMA TECHNOLOGIES INC   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; IONS; IRON; LIGHT TRANSMISSION; LUMINESCENCE; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

DEEP LEVEL SPECTRA; LUMINESCENCE SPECTRA; ROOM TEMPERATURE RESISTIVITY;

GALLIUM NITRIDE;

EID: 34249868437     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2718962     Document Type: Article

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