A Raman spectroscopy study of InN

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 59-65

  Kuball, M ^a   Pomeroy, J W ^a   Wintrebert Fouquet, M ^b   Butcher, K S A ^b   Lu, Hai ^c   Schaff, W J ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b MACQUARIE UNIVERSITY   (Australia)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

A1. Photoluminescence; A1. Raman scattering; A3. Low temperature growth; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON TRANSITIONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SPUTTERING;

BAND GAPS; LASER EXCITATION; LOW TEMPERATURE GROWTH; RAMAN ANALYSIS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342940220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.034     Document Type: Conference Paper

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