The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire

Materials Letters

Volumn 58, Issue 27-28, 2004, Pages 3641-3644

  Bi, Z X ^a   Zhang, R ^a   Xie, Z L ^a   Xiu, X Q ^a   Ye, Y D ^a   Liu, B ^a   Gu, S L ^a   Shen, B ^a   Shi, Y ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Indium nitride; Scanning electron microscope; X ray diffraction

Indexed keywords

ADSORPTION; AGGLOMERATION; DECOMPOSITION; DESORPTION; INDIUM COMPOUNDS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DIFFRACTION SIGNALS; GROWTH TEMPERATURES; INDIUM NITRIDE; SYNTHESIZED FILMS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 4944255138     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2004.07.011     Document Type: Article

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