SCOPUS 정보 검색 플랫폼

Volumn 476, Issue 2, 2005, Pages 276-279

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

Author keywords

Ion bombardment; Nitrides; Sputtering; X ray diffraction

Indexed keywords

DEPOSITION; ION BEAMS; ION BOMBARDMENT; PLASMA APPLICATIONS; RADIO WAVES; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION;

FILM DEPOSITION; REACTIVE ION BEAM SPUTTERING; SPUTTER CLEANING; SPUTTER ETCHING;

THIN FILMS;

EID: 13844310750 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.09.032 Document Type: Article

Times cited : (9)

References (16)

1
- 0347874296
- S.C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten J. Appl. Phys. 87 2000 965
- (2000) J. Appl. Phys. , vol.87 , pp. 965
- Jain, S.C.¹ Willander, M.² Narayan, J.³ Van Overstraeten, R.⁴

2
- 0141990606
- I. Vurgaftman, and J.R. Meyer J. Appl. Phys. 94 2003 3675
- (2003) J. Appl. Phys. , vol.94 , pp. 3675
- Vurgaftman, I.¹ Meyer, J.R.²

3
- 0000527362
- S.K. O'Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar, and L.F. Eastman J. Appl. Phys. 83 1998 826
- (1998) J. Appl. Phys. , vol.83 , pp. 826
- O'Leary, S.K.¹ Foutz, B.E.² Shur, M.S.³ Bhapkar, U.V.⁴ Eastman, L.F.⁵

4
- 0028416598
- A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto J. Crystal Growth 137 1994 415
- (1994) J. Crystal Growth , vol.137 , pp. 415
- Yamamoto, A.¹ Tsujino, M.² Ohkubo, M.³ Hashimoto, A.⁴

5
- 0028761543
- A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto Sol. Energy Mater. Sol. Cells 35 1994 53
- (1994) Sol. Energy Mater. Sol. Cells , vol.35 , pp. 53
- Yamamoto, A.¹ Tsujino, M.² Ohkubo, M.³ Hashimoto, A.⁴

6
- 0032050793
- O. Takai, K. Ikuta, and Y. Inoue Thin Solid Films 318 1998 148
- (1998) Thin Solid Films , vol.318 , pp. 148
- Takai, O.¹ Ikuta, K.² Inoue, Y.³

7
- 0001445291
- T. Tsuchiya, H. Yamano, O. Miki, A. Wakahara, and A. Yoshida Jpn. J. Appl. Phys. 38 1999 1884
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 1884
- Tsuchiya, T.¹ Yamano, H.² Miki, O.³ Wakahara, A.⁴ Yoshida, A.⁵

8
- 0035247846
- Y. Saito, N. Teraguchi, A. Suzuki, T. Araki, and Y. Nanishi Jpn. J. Appl. Phys. 40 2001 L91
- (2001) Jpn. J. Appl. Phys. , vol.40
- Saito, Y.¹ Teraguchi, N.² Suzuki, A.³ Araki, T.⁴ Nanishi, Y.⁵

9
- 0036531185
- Y. Saito, T. Yamaguchi, H. Kanazawa, K. Kano, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki J. Crystal Growth 237-239 2002 1017
- (2002) J. Crystal Growth , vol.237-239 , pp. 1017
- Saito, Y.¹ Yamaguchi, T.² Kanazawa, H.³ Kano, K.⁴ Araki, T.⁵ Nanishi, Y.⁶ Teraguchi, N.⁷ Suzuki, A.⁸

10
- 0027904692
- S. Strite, D. Chandrasekhar, D.J. Smith, J. Sariel, H. Chen, N. Teraguchi, and H. Morkoç J. Crystal Growth 127 1993 204
- (1993) J. Crystal Growth , vol.127 , pp. 204
- Strite, S.¹ Chandrasekhar, D.² Smith, D.J.³ Sariel, J.⁴ Chen, H.⁵ Teraguchi, N.⁶ Morkoç, H.⁷

11
- 0001218596
- Q. Guo, M. Nishio, H. Ogawa, and A. Yoshida Jpn. J. Appl. Phys. 38 1999 L490
- (1999) Jpn. J. Appl. Phys. , vol.38
- Guo, Q.¹ Nishio, M.² Ogawa, H.³ Yoshida, A.⁴

12
- 0032640785
- A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schöttker, T. Frey, D.J. As, and K. Lischka J. Crystal Growth 201/202 1999 396
- (1999) J. Crystal Growth , vol.201-202 , pp. 396
- Lima, A.P.¹ Tabata, A.² Leite, J.R.³ Kaiser, S.⁴ Schikora, D.⁵ Schöttker, B.⁶ Frey, T.⁷ As, D.J.⁸ Lischka, K.⁹

13
- 0037095548
- M. Higashiwaki, and T. Matsui Jpn. J. Appl. Phys. 41 2002 L540
- (2002) Jpn. J. Appl. Phys. , vol.41
- Higashiwaki, M.¹ Matsui, T.²

14
- 0039502732
- T. Maruyama, and T. Morishita J. Appl. Phys. 76 1994 5809
- (1994) J. Appl. Phys. , vol.76 , pp. 5809
- Maruyama, T.¹ Morishita, T.²

15
- 0036508390
- H. Shinoda, and N. Mutsukura Diamond Relat. Mater. 11 2002 896
- (2002) Diamond Relat. Mater. , vol.11 , pp. 896
- Shinoda, H.¹ Mutsukura, N.²

16
- 0031143943
- M. Sato Jpn. J. Appl. Phys. 36 1997 L595
- (1997) Jpn. J. Appl. Phys. , vol.36
- Sato, M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.