Atomic simulation of SiC etching by energetic Si F3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 680-685

  Gou, F ^a   Chuanliang, Meng ^a   Lingzhouting, Chen ^a   Qian, Qiu ^a  

^a GUIZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MOLECULAR DYNAMICS; MONOLAYERS; REACTION KINETICS; SPUTTER DEPOSITION; THERMAL EFFECTS;

ATOMIC SIMULATION; INCIDENT ENERGY; SURFACE TEMPERATURES;

SILICON CARBIDE;

EID: 34547290427     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2735965     Document Type: Article

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