Interaction of SiF3 with silicon surface: Molecular dynamics simulation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 248, Issue 1, 2006, Pages 113-116

  Gou, F ^a,b   Xie, Q ^a   Zhu, L ^a   Weili, Sun ^b   Ming, Xu ^b  

^a GUIZHOU UNIVERSITY   (China)

^b SICHUAN NORMAL UNIVERSITY   (China)

Author keywords

Ion bombardment; Molecule dynamics; Plasma etching; Silicon; Surface

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; INTERFACIAL ENERGY; ION BOMBARDMENT; MOLECULAR DYNAMICS; PLASMA ETCHING; SATURATION (MATERIALS COMPOSITION); SURFACES; TEMPERATURE DISTRIBUTION; THICKNESS CONTROL;

INCIDENT ENERGY; INTERFACIAL LAYER; MOLECULAR DYNAMICS SIMULATIONS;

SILICON COMPOUNDS;

EID: 33744903908     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.175     Document Type: Article

References (13)

1. Winters H.F., and Coburn J.W. Surf. Sci. Rep. 14 (1992) 161
2. Coburn J.W. Appl. Phys. A - Mater. 59 (1994) 451
3. Chang J.P., and Coburn J.W. J. Vac. Sci. Technol. A 21 (2003) S145
4. Coburn J.W. J. Vac. Sci. Technol. A 12 (1994) 1417
5. Coburn J.W. Phys. Scr. T 23 (1988) 258
6. von Gradowski M., Jacoby B., Hilgers H., Barz J., Wahl M., and Kopnarski M. Surf. Coat. Technol. 200 (2005) 334
7. Coburn J.W. J. Vac. Sci. Technol. A 4 (1986) 1830
8. Abrams C.F., and Graves D.B. J. Vac. Sci. Technol. A 19 (2001) 175
9. Abrams C.F., and Graves D.B. J. Appl. Phys. 86 (1999) 5938
10. Helmer B.A., and Graves D.B. J. Vac. Sci. Technol. A 15 (1997) 2252
11. Barone M.E., and Graves D.B. J. Appl. Phys. 77 (1995) 1263
12. Smirnov V.V., Stengach A.V., Gaynullin K.G., Pavlovsky V.A., Rauf S., Stout P., and Ventzek P.L.G. J. Appl. Phys. 97 (2005) 093302
13. Wijesundara M.B.J., Ji Y., Ni B., Sinnott S.B., and Hanley L. J. Appl. Phys. 88 (2000) 5004