Improving SiC lateral DMOSFET reliability under high field stress

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1889-1894

  Ayalew, T ^a   Gehring, A ^a   Park, J M ^a   Grasser, T ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; SEMICONDUCTING SILICON COMPOUNDS;

DEVICE SIMULATORS;

MOSFET DEVICES;

EID: 0042193161     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00321-4     Document Type: Conference Paper

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