Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1953-1957

  Levinshtein, Michael E ^a   Mnatsakanov, Tigran T ^b   Yurkov, Sergey N ^b   Ivanov, Pavel A ^a   Tandoev, Aleksey G ^b   Agarwal, Anant K ^c   Palmour, John W ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Silicon carbide; Switch off process; Thyristor

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MOSFET DEVICES; SILICON CARBIDE; THYRISTORS;

CHARGE DENSITY;

MOS DEVICES;

EID: 0036838551     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00126-0     Document Type: Conference Paper

References (15)

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