Plasma etching of SiC surface using NF3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 4, 2002, Pages 1254-1260

  Tasaka, A ^a   Takahashi, K ^a   Tanaka, K ^a   Shimizu, K ^a   Mori, K ^a   Tada, S ^a   Shimizu, W ^a   Abe, T ^b   Inaba, M ^b   Ogumi, Z ^b   Tojo, T ^c  

^a DOSHISHA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c Toyo Tanso Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MORPHOLOGY; NITROGEN COMPOUNDS; PLASMA ETCHING; PRESSURE EFFECTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACE REACTIONS; SURFACE ROUGHNESS;

ETCHING RATE; FLOW ETCHING; PLASMA SPUTTERING;

SILICON CARBIDE;

EID: 0036648278     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481044     Document Type: Article

References (16)