Etching of SiC with fluorine ECR plasma

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 821-824

  Forster Ch ^a   Cimalla, V ^a   Kosiba, R ^a   Ecke, G ^a   Weih, P ^a   Ambacher, O ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

3C SiC; Dry Etching Process; Electron Cyclotron Resonance

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; FLUORINE; MAGNETIC FLUX; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; PLASMA ETCHING; REACTION KINETICS; REFLECTOMETERS;

CIRCUIT MATCHING; FLUORINATION; FREE SURFACE; PLASMA GASES;

SILICON CARBIDE;

EID: 8644237455     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.821     Document Type: Conference Paper

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