Etching of SiC by energetic F 2 : Molecular dynamics simulation

Applied Surface Science

Volumn 253, Issue 21, 2007, Pages 8743-8748

  Gou, F ^a   Liang, M C ^a   Chen, Z ^a   Qian, Qiu ^a  

^a School of Electronic Science and Information Technology   (China)

Author keywords

Molecular dynamics methods; Plasma etching; Silicon carbide; Surface

Indexed keywords

COMPUTER SIMULATION; MOLECULAR DYNAMICS; PLASMA ETCHING; SURFACE STRUCTURE;

INCIDENT ENERGY; MOLECULAR DYNAMICS SIMULATION; TERSOFF BRENNER FORM POTENTIAL;

SILICON CARBIDE;

EID: 34547185969     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.04.051     Document Type: Article

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