Auger and energy loss spectroscopy analysis of silicon carbide (SiC) surfaces

Vacuum

Volumn 47, Issue 2, 1996, Pages 141-143

  Ghamnia, M ^a   Jardin, C ^b   Kadri, D ^d   Bouslama, M ^c  

^a UNIVERSITY OF ORAN   (Algeria)

^b UNIVERSITÉ LYON 1   (France)

^c Ecl Normale Sup d'Enseignement T   (Algeria)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; CRYSTALS; ELECTRON ENERGY LOSS SPECTROSCOPY; HEAT TREATMENT; SURFACES;

CARBON RICH SURFACES;

SILICON CARBIDE;

EID: 0030084377     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(95)00196-4     Document Type: Article

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