Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112̄0), and 6H-SiC(0001)

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 112-117

  Kimoto, Tsunenobu ^a   Kosugi, Hajime ^a   Suda, Jun ^a   Kanzaki, Yosuke ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Power device; Power MOSFET; Reduced surface field (RESURF); Silicon carbide (SIC)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

POWER DEVICE; POWER MOSFET; REDUCED SURFACE FIELD (RESURF);

MOSFET DEVICES;

EID: 12344276948     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841358     Document Type: Article

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