Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 3, 2003, Pages 516-522

  Darakchieva, V ^a   Paskova, T ^a   Paskov, P P ^a   Monemar, B ^a   Ashkenov, N ^b   Schubert, M ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; LATTICE CONSTANTS; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RELAXATION PROCESSES; STRAIN; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

FREE STANDING LAYERS; HOMOEPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY; RESIDUAL STRAIN;

GALLIUM NITRIDE;

EID: 0037309656     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306145     Document Type: Article

References (17)

1. S. Porowski and I. Grzegory, J. Cryst. Growth 178, 174 (1997).
2. R. J. Molnar, K. B. Nikolas, P. Maki, E. R. Brown, and I. Melngailis, Mater. Res. Soc. Symp. Proc. 378, 479 (1995).
3. A. Usui, H. Sunakawa, and A. A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).
4. T. Paskova and B. Monemar, "Low-dimensional nitride semiconductors", edited by B. Gil, Oxford University Press, (2002) p. 79.
5. M. K. Kelly, O. Ambacher, B. Dalheimer, G. Gross, R. Dimitrov, H. Angereer, and M. Stutzmann, Appl. Phys. Lett. 69, 1749 (1996).
6. M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Gorgens, O. Ambacher, and M. Stutzmann, Jpn. J. Appl. Phys. 38, L217 (1999).
7. R. P. Vaudo, G. R. Brandes, J. S. Flynn, X. Xu, M. F. Chriss, C. S. Christos, D. M. Keogh, and F. D. Tamweber, Proc. IWN2000, Nagoya, Jpn, IPAP Conference Series C1, 15 (2001).
8. S. S. Park, I. W. Park, and S. H. Choh, Proc. IWN2000, Nagoya, Jpn, IPAP Conference Series C1, 60 (2001).
9. T. Paskova, P. P. Paskov, V. Darakchieva, S. Tungasmita, J. Birch, and B. Monemar, phys. stat. sol. (a) 183, 197 (2001).
10. T. Paskova, S. Tungasmita, E. Valcheva, E. B. Svedberg, B. Arnaudov, S. Evtimova, P. O. Å. Persson, A. Henry, R. Beccard, M. Heuken, and B. Monemar, MRS Internet J. Nitride Semicond. Res. edited by H. Amano, R. Feenstra, T. Myers, and Shur, 5S1, W3.14 (2000).
11. E. Valcheva, T. Paskova, M. V. Abrashev, P. P. Paskov, P. O. Å. Persson, E. M. Goldys, R. Beccard, M. Heuken, and B. Monemar, J. Appl. Phys. 90, 6011 (2001).
12. P. F. Fewster and N. L. Andrew, J. Appl. Crystallogr. 28, 451 (1995).
13. I. C. Noyan and J. B. Cohen, Residual Stress - Measurement by Diffraction and Interpretation, Springer-Verlag (1987).
14. K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Achwegler, M. Kamp, M. Leszczynski, I. Grzeggory, and S. Porowski, Phys. Rev. B 60, 1471 (1999).
15. T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yadi, S. Chichibu, and S. Nakamura, J. Appl. Phys. 86, 1860 (1999).
16. T. Paskova, P. P. Paskov, J. Birch, E. Valcheva, M. Abrashev, S. Tungasmita, and B. Monemar, Proc. IWN2000, Nagoya, Jpn, IPAP Conference Series C1, 19 (2001).
17. C. Kisielowski, J. Krueger, S. Ruvimov, T. Suski, J. W III Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17745 (1996).