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Volumn 308-310, Issue , 2001, Pages 51-57

Magnetic resonance studies of defects in GaN with reduced dislocation densities

(15) Glaser, E R a Freitas Jr , J A a Braga, G C a Carlos, W E a Twigg, M E a Wickenden, A E a Koleske, D D a Henry, R L a Leszczynski, M b Grzegory, I b Suski, T b Porowski, S b Park, S S c Lee, K Y c Molnar, R J d

a NAVAL RESEARCH LABORATORY (United States)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

d MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

GaN; Homoepitaxial; HVPE; Magnetic resonance; Photoluminescence

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITIES;

GALLIUM NITRIDE;

EID: 0035679089 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00648-2 Document Type: Article

Times cited : (10)

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