Growth and separation related properties of HVPE-GaN free-standing films

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 207-214

  Paskova, Tanya ^a   Darakchieva, V ^a   Paskov, P P ^a   Sodervall U ^b   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

A1. Emission properties; A1. Impurities; A1. Lattice parameters; A1. Stress; A3. Free standing films; B1. Gallium nitride

Indexed keywords

CRYSTAL IMPURITIES; FILM GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; STRAIN; STRESS ANALYSIS; X RAY ANALYSIS;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

VAPOR PHASE EPITAXY;

EID: 0037121730     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01743-8     Document Type: Conference Paper

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