Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 118-128

  Paskova, T ^a   Paskov, P P ^a   Goldys, E M ^b   Valcheva, E ^a   Darakchieva, V ^a   Sodervall U ^c   Godlewski, M ^d   Zielinski, M ^d   Hautakangas, S ^e   Saarinen, K ^e   Carlstrom C F ^f   Wahab, Q ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MACQUARIE UNIVERSITY   (Australia)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d INSTITUTE OF PHYSICS   (Poland)

^e AALTO UNIVERSITY   (Finland)

^f HMA   (Sweden)

Author keywords

A1. Emission properties; A1. Impurities; A1. Stresses; A1. Volume defects; A3. Mass transport; B1. Nitrides

Indexed keywords

CHARACTERIZATION; DEFECTS; IMPURITIES; MASS TRANSFER; MICROSTRUCTURE; NITRIDES; STRESSES; VAPOR PHASE EPITAXY;

EMISSION PROPERTIES; MASS TRANSPORT; MICROSTRUCTURAL PROPERTIES; VOLUME DEFECTS;

GALLIUM NITRIDE;

EID: 10044239631     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.025     Document Type: Article

References (23)

1. T. Zheleva, O. Nam, M. Bremser, R. Davis, Appl. Phys. Lett. 71 (1997) 2472.
2. A. Usui, H. Sunakawa, A. Sakai, A.A. Yamaguchi, Jpn. J. Appl. Phys. 36 (1997) L899.
3. A. Sakai, H. Sunakawa, A. Usui, Appl. Phys. Lett. 71 (1999) 2259.
4. Y. Kawaguchi, S. Nambu, H. Sone, M. Yamagichi, H. Miyake, K. Hiramatsu, N. Sawaki, Y. Iyechika, T. Maeda, Mater. Res. Soc. Symp. Proc. 537 (1996) G3.17.
5. T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal, R.P. Davis, J. Electron. Mater. 28 (1999) L5.
6. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, N. Sawaki, Appl. Phys. Lett. 74 (1999) 359.
7. S. Nitta, T. Kashima, M. Kariya, Y. Yukawa, S. Yamaguchi, H. Amano, I. Akasaki, MRS J. Nitride Semicond. Res. 5S1 (2000) W2.8.
8. S. Nitta, M. Kariya, T. Kashima, S. Yamaguchi, H. Amano, I. Akasaki, Appl. Surf. Sci. 159-160 (2000) 421.
9. S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, Appl. Phys. Lett. 78 (2001) 2876.
10. T. Paskova, E.M. Goldys, P.P. Paskov, Q. Wahab, L. Wilzen, M.P. de Jong, B. Monemar, Appl. Phys. Lett. 78 (2001) 4130.
11. T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O.Å. Persson, P.P. Paskov, S. Evtimova, M. Abrashev, B. Monemar, J. Crystal Growth 230 (2001) 381.
12. K. Saarinen, in: M.O. Manasreh (Ed.)., III-Nitride Semiconductors: Electrical, Structural and Defects Properties, Elsevier, Amsterdam, 2000, p. 109.
13. X. Wu, C. Elsass, A. Abare, M. Mack, S. Keller, P. Petroff, S. DenBaars, J. Speck, S. Rosner, Appl. Phys. Lett. 72 (1998) 692.
14. M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, P. Gibart, J. Appl. Phys. 86 (1999) 3721.
15. J. Oila, V. Ranki, K. Saarinen, P. Hautojärvi, J. Likonen, J.M. Baranowski, K. Pakula, M. Leszczynski, I. Grzegory, Phys. Rev. B 63 (2001) 045205.
16. B. Arnaudov, T. Paskova, E.M. Goldys, R. Yakimova, S. Evtimova, I.G. Ivanov, A. Henry, B. Monemar, J. Appl. Phys. 85 (1999) 7888.
17. B. Arnaudov, T. Paskova, E.M. Goldys, S. Evtimova, B. Monemar, Phys. Rev. B 64 (2001) 045213.
18. K. Saarinen, T. Laine, S. Kuisma, J. Nissilä, P. Hautojärvi, L. Dobrzynski, J.M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, S. Porowski, Phys. Rev. Lett. 79 (1997) 3030.
19. K. Saarinen, T. Suski, I. Grzegory, D.C. Look, Phys. Rev. B 64 (2001) 233201.
20. P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, J. Keränen, J. Appl. Phys. 92 (2002) 786.
21. M. Rummukainen, J. Oila, A. Laakso, K. Saarinen, P.J. Ptak, T.H. Myers, Appl. Phys. Lett. 84 (2004) 4887.
22. B. Arnaudov, T. Paskova, P.P. Paskov, E.M. Goldys, K. Saarinen, U. Södervall, B. Monemar (unpublished).
23. C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, Phys. Rev. B 54 (1996) 17745.