Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 445-449

  Napierala, J ^a   Martin, D ^a   Grandjean, N ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

A1. Defects; A1. Stresses; A3. Hydride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRACKS; FABRICATION; GRAIN SIZE AND SHAPE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; STRESS ANALYSIS; THICK FILMS;

CRYSTALLITES; HYDRIDE VAPOR PHASE EPITAXY; STRESS CONTROL;

GALLIUM NITRIDE;

EID: 33644857847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.103     Document Type: Article

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