Thickness influence on optical and morphological properties of HVPE GaN layers grown on MOCVD GaN layers

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 1, 2002, Pages 53-58

  Trassoudaine, A ^a   Siozade, L ^a   Aujol, E ^a   Cadoret, R ^a   Castelluci, D ^a   Vasson, A ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SURFACES; VAPOR PHASE EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 37649008578     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200203)190:1<53::AID-PSSA53>3.0.CO;2-E     Document Type: Conference Paper

References (7)