MOCVD growth of group III nitrides for high power, high frequency applications

Physica Status Solidi C: Conferences

Volumn 2, Issue 3, 2005, Pages 947-955

  Di Forte Poisson, M A ^a   Magis, M ^a   Tordjman, M ^a   Sarazin, N ^a   Di Persio, J ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SILICON CARBIDE; THERMODYNAMIC PROPERTIES;

GAALN/GAN HETEROSTRUCTURES; LP-MOCVD GROWTH; MICROWAVE TRANSISTORS; POWER DENSITY;

GALLIUM NITRIDE;

EID: 27344453827     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460600     Document Type: Conference Paper

References (8)

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