Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 μm technology and beyond

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 254-258

  Tan, S S ^a   Ang, C H ^c   Lek, C M ^b   Chen, T P ^a   Cho, B J ^b   See, A ^c   Chan, L ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Boron; Dielectrics; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Nitrogen; Plasma temperature; Thermal degradation; Thermal resistance; Titanium compounds

Indexed keywords

BORON; DIELECTRIC MATERIALS; FAILURE ANALYSIS; GATE DIELECTRICS; HEAT RESISTANCE; HOLE MOBILITY; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NIOBIUM COMPOUNDS; NITRIDATION; NITROGEN; NITROGEN PLASMA; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMA STABILITY; PYROLYSIS; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

INTERFACIAL QUALITIES; MOSFET CIRCUITS; NEGATIVE BIAS TEMPERATURE INSTABILITY; PLASMA NITRIDATION; PLASMA NITRIDED GATE DIELECTRICS; PLASMA TEMPERATURE; PLASMA-NITRIDED OXIDES; THERMAL NITRIDATION;

INTEGRATED CIRCUITS;

EID: 84948733158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025674     Document Type: Conference Paper

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